Premium
Piezophototronic Effect in Single‐Atomic‐Layer MoS 2 for Strain‐Gated Flexible Optoelectronics
Author(s) -
Wu Wenzhuo,
Wang Lei,
Yu Ruomeng,
Liu Yuanyue,
Wei SuHuai,
Hone James,
Wang Zhong Lin
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201602854
Subject(s) - materials science , optoelectronics , piezoelectricity , monolayer , photodiode , layer (electronics) , strain (injury) , polarization (electrochemistry) , nanotechnology , composite material , medicine , chemistry
Strain‐gated flexible optoelectronics are reported based on monolayer MoS 2 . Utilizing the piezoelectric polarization created at the metal‐MoS 2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic‐layer‐thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.