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Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation‐Free Planar Ultraviolet Photonic Device Applications
Author(s) -
Le Binh H.,
Zhao Songrui,
Liu Xianhe,
Woo Steffi Y.,
Botton Gianluigi A.,
Mi Zetian
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201602645
Subject(s) - materials science , nanowire , optoelectronics , coalescence (physics) , sapphire , planar , ultraviolet , diode , dislocation , photonics , template , epitaxy , nanotechnology , optics , composite material , laser , physics , computer graphics (images) , layer (electronics) , astrobiology , computer science
Nearly dislocation‐free semipolar AlGaN templates are achieved on c ‐plane sapphire substrate through controlled nanowire coalescence by selective‐area epitaxy. The coalesced Mg‐doped AlGaN layers exhibit superior charge‐carrier‐transport properties. Semipolar‐AlGaN ultraviolet light‐emitting diodes demonstrate excellent performance. This work establishes the use of engineered nanowire structures as a viable architecture to achieve large‐area, dislocation‐free planar photonic and electronic devices.