Enhanced Optical and Electrical Properties of Polymer‐Assisted All‐Inorganic Perovskites for Light‐Emitting Diodes | Zendy

Ling Yichuan | Zendy; Tian Yu | Zendy; Wang Xi | Zendy; Wang Jamie C. | Zendy; Knox Javon M. | Zendy; PerezOrive Fernando | Zendy; Du Yijun | Zendy; Tan Lei | Zendy; Hanson Kenneth | Zendy; Ma Biwu | Zendy; Gao Hanwei | Zendy

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Enhanced Optical and Electrical Properties of Polymer‐Assisted All‐Inorganic Perovskites for Light‐Emitting Diodes

Author(s) -

Ling Yichuan,

Tian Yu,

Wang Xi,

Wang Jamie C.,

Knox Javon M.,

PerezOrive Fernando,

Du Yijun,

Tan Lei,

Hanson Kenneth,

Ma Biwu,

Gao Hanwei

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201602513

Subject(s) - materials science , electroluminescence , perovskite (structure) , optoelectronics , photoluminescence , light emitting diode , diode , quantum yield , quantum efficiency , chemical engineering , nanotechnology , optics , physics , layer (electronics) , engineering , fluorescence

Highly bright light‐emitting diodes based on solution‐processed all‐inorganic perovskite thin film are demonstrated. The cesium lead bromide (CsPbBr 3 ) created using a new poly(ethylene oxide)‐additive spin‐coating method exhibits photoluminescence quantum yield up to 60% and excellent uniformity of electrical current distribution. Using the smooth CsPbBr 3 films as emitting layers, green perovskite‐based light‐emitting diodes (PeLEDs) exhibit electroluminescent brightness and efficiency above 53 000 cd m −2 and 4%: a new benchmark of device performance for all‐inorganic PeLEDs.

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