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High‐Performance, Air‐Stable Field‐Effect Transistors Based on Heteroatom‐Substituted Naphthalenediimide‐Benzothiadiazole Copolymers Exhibiting Ultrahigh Electron Mobility up to 8.5 cm V −1 s −1
Author(s) -
Zhao Zhiyuan,
Yin Zhihong,
Chen Huajie,
Zheng Liping,
Zhu Chunguang,
Zhang Long,
Tan Songting,
Wang Hanlin,
Guo Yunlong,
Tang Qingxin,
Liu Yunqi
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201602410
Subject(s) - heteroatom , copolymer , materials science , transistor , electron mobility , polymer , electron , intermolecular force , nanotechnology , field effect transistor , polymer science , optoelectronics , organic chemistry , physics , molecule , chemistry , quantum mechanics , ring (chemistry) , voltage , composite material
Rational heteroatom engineering is applied to develop high‐performance electron‐transporting naphthalenediimide copolymers. Top‐gate field‐effect transistors fabricated from selenophene‐containing polymers achieve an ultrahigh electron mobility of 8.5 cm 2 V −1 s −1 and excellent air‐stability. The results demonstrate that the incorporation of selenophene heterocycles into the polymers can improve the film‐forming ability, intermolecular interaction, and carrier transport significantly.