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Atomic‐Scale Origin of Long‐Term Stability and High Performance of p ‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting
Author(s) -
Kibria Md Golam,
Qiao Ruimin,
Yang Wanli,
Boukahil Idris,
Kong Xianghua,
Chowdhury Faqrul Alam,
Trudeau Michel L.,
Ji Wei,
Guo Hong,
Himpsel F. J.,
Vayssieres Lionel,
Mi Zetian
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201602274
Subject(s) - materials science , nanowire , wurtzite crystal structure , photocatalysis , water splitting , atomic units , polar , nitride , chemical physics , nanotechnology , chemical engineering , optoelectronics , catalysis , zinc , layer (electronics) , biochemistry , chemistry , physics , quantum mechanics , astronomy , engineering , metallurgy
The atomic‐scale origin of the unusually high performance and long‐term stability of wurtzite p ‐GaN oriented nanowire arrays is revealed. Nitrogen termination of both the polar ( 000 1 ¯ ) top face and the nonpolar ( 10 1 ¯ 0 ) side faces of the nanowires is essential for long‐term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but, as importantly, also provides the necessary overall reverse crystal polarization needed for efficient hole extraction in p ‐GaN.
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