Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS 2 | Zendy

Wang Zhenwei | Zendy; He Xin | Zendy; Zhang XiXiang | Zendy; Alshareef Husam N. | Zendy

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Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS 2

Author(s) -

Wang Zhenwei,

He Xin,

Zhang XiXiang,

Alshareef Husam N.

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201602157

Subject(s) - heterojunction , materials science , molybdenum disulfide , rectification , oxide , van der waals force , tin oxide , nanotechnology , tin , optoelectronics , physics , molecule , chemistry , organic chemistry , thermodynamics , power (physics) , metallurgy

A p‐type oxide/2D hybrid van der Waals p–n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p‐type oxide) and 2D MoS 2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10 4 . The reported heterojunction is gate‐tunable with typical anti‐ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

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