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Isoelectronic Tungsten Doping in Monolayer MoSe 2 for Carrier Type Modulation
Author(s) -
Li Xufan,
Lin MingWei,
Basile Leonardo,
Hus Saban M.,
Puretzky Alexander A.,
Lee Jaekwang,
Kuo YenChien,
Chang LoYueh,
Wang Kai,
Idrobo Juan C.,
Li AnPing,
Chen ChiaHao,
Rouleau Christopher M.,
Geohegan David B.,
Xiao Kai
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601991
Subject(s) - monolayer , doping , materials science , type (biology) , tungsten , fermi gamma ray space telescope , transition metal , condensed matter physics , modulation (music) , nanotechnology , optoelectronics , physics , chemistry , ecology , biochemistry , acoustics , metallurgy , biology , catalysis
Carrier‐type modulation is demonstrated in 2D transition metal dichalcogenides as n‐type monolayer MoSe 2 is converted to nondegenerate p‐type monolayer Mo 1− x W x Se 2 through isoelectronic doping. Although the alloys are mesoscopically uniform, the p‐type conduction in monolayer Mo 1− x W x Se 2 appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized “W‐rich” regions in the lattice.