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The Effect of Thermal Annealing on Charge Transport in Organolead Halide Perovskite Microplate Field‐Effect Transistors
Author(s) -
Li Dehui,
Cheng HungChieh,
Wang Yiliu,
Zhao Zipeng,
Wang Gongming,
Wu Hao,
He Qiyuan,
Huang Yu,
Duan Xiangfeng
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601959
Subject(s) - ambipolar diffusion , materials science , halide , annealing (glass) , photoluminescence , semiconductor , field effect transistor , optoelectronics , transistor , charge carrier , thermal , analytical chemistry (journal) , perovskite (structure) , inorganic chemistry , crystallography , chemistry , electrical engineering , voltage , thermodynamics , electron , physics , quantum mechanics , chromatography , composite material , engineering
Transformation of unipolar n‐type semiconductor behavior to ambipolar and finally to unipolar p‐type behavior in CH 3 NH 3 PbI 3 microplate field‐effect transistors by thermal annealing is reported. The photoluminescence spectra essentially maintain the same features before and after the thermal annealing process, demonstrating that the charge transport measurement provides a sensitive way to probe low‐concentration defects in perovskite materials.