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Gate‐Tunable Hole and Electron Carrier Transport in Atomically Thin Dual‐Channel WSe 2 /MoS 2 Heterostructure for Ambipolar Field‐Effect Transistors
Author(s) -
Lee Inyeal,
Rathi Servin,
Lim Dongsuk,
Li Lijun,
Park Jinwoo,
Lee Yoontae,
Yi Kyung Soo,
Dhakal Krishna P.,
Kim Jeongyong,
Lee Changgu,
Lee GwanHyoung,
Kim Young Duck,
Hone James,
Yun Sun Jin,
Youn DooHyeb,
Kim GilHo
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601949
Subject(s) - ambipolar diffusion , heterojunction , materials science , transistor , electron , optoelectronics , field effect transistor , tunnel field effect transistor , channel (broadcasting) , dual (grammatical number) , electron mobility , field (mathematics) , nanotechnology , electrical engineering , computer science , physics , telecommunications , voltage , art , literature , quantum mechanics , engineering , mathematics , pure mathematics
An ambipolar dual‐channel field‐effect transistor (FET) with a WSe 2 /MoS 2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS 2 and WSe 2 , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe 2 /MoS 2 dual‐channel FET.