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Flexible GaN Light‐Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots
Author(s) -
Chung Kunook,
Yoo Hyobin,
Hyun Jerome K.,
Oh Hongseok,
Tchoe Youngbin,
Lee Keundong,
Baek Hyeonjun,
Kim Miyoung,
Yi GyuChul
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601894
Subject(s) - materials science , optoelectronics , graphene , light emitting diode , epitaxy , diode , fabrication , nanotechnology , lift (data mining) , computer science , medicine , alternative medicine , layer (electronics) , pathology , data mining
The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light‐emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro‐LED arrays are transferred onto Cu foil by a simple lift‐off technique, which works reliably under various bending conditions.