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Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire
Author(s) -
Wang Xingfu,
Yu Ruomeng,
Jiang Chunyan,
Hu Weiguo,
Wu Wenzhuo,
Ding Yong,
Peng Wenbo,
Li Shuti,
Wang Zhong Lin
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601721
Subject(s) - heterojunction , materials science , optoelectronics , conductance , ultimate tensile strength , fermi gas , electron , composite material , condensed matter physics , physics , quantum mechanics
The piezotronic effect is applied to modulate the physical properties of heterojunction electron gas and thus tune the electric transport in AlGaN/AlN/GaN heterostructure microwires. At room temperature, the conductance is increased by 165% under −1.78% compressive strains, and reduced by 48% under 1.78% tensile strains; at 77 K, this modulating effect is further improved by 890% and 940% under compressive and tensile strains, respectively.