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Ferroelectric‐Driven Performance Enhancement of Graphene Field‐Effect Transistors Based on Vertical Tunneling Heterostructures
Author(s) -
Yuan Shuoguo,
Yang Zhibin,
Xie Chao,
Yan Feng,
Dai Jiyan,
Lau Shu Ping,
Chan Helen L. W.,
Hao Jianhua
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601489
Subject(s) - heterojunction , ferroelectricity , materials science , graphene , transistor , quantum tunnelling , nanotechnology , optoelectronics , field effect transistor , engineering physics , electrical engineering , physics , engineering , voltage , dielectric
A vertical graphene heterostructure field‐effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high‐performance device. The results pave the way for developing novel atomic‐scale 2D heterostructures and devices.