Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica | Zendy

Mehonic Adnan | Zendy; Buckwell Mark | Zendy; Montesi Luca | Zendy; Munde Manveer Singh | Zendy; Gao David | Zendy; Hudziak Stephen | Zendy; Chater Richard J. | Zendy; Fearn Sarah | Zendy; McPhail David | Zendy; Bosman Michel | Zendy; Shluger Alexander L. | Zendy; Kenyon Anthony J. | Zendy

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Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica

Author(s) -

Mehonic Adnan,

Buckwell Mark,

Montesi Luca,

Munde Manveer Singh,

Gao David,

Hudziak Stephen,

Chater Richard J.,

Fearn Sarah,

McPhail David,

Bosman Michel,

Shluger Alexander L.,

Kenyon Anthony J.

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201601208

Subject(s) - materials science , metastability , amorphous solid , nanoscopic scale , silicon , nanotechnology , amorphous silicon , oxide , ion , amorphous silica , biasing , silicon oxide , range (aeronautics) , chemical physics , chemical engineering , crystalline silicon , optoelectronics , voltage , crystallography , composite material , metallurgy , organic chemistry , chemistry , engineering , physics , silicon nitride , quantum mechanics

Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field‐driven local reordering of a random oxide network.

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