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Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica
Author(s) -
Mehonic Adnan,
Buckwell Mark,
Montesi Luca,
Munde Manveer Singh,
Gao David,
Hudziak Stephen,
Chater Richard J.,
Fearn Sarah,
McPhail David,
Bosman Michel,
Shluger Alexander L.,
Kenyon Anthony J.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601208
Subject(s) - materials science , nanoscopic scale , metastability , silicon , nanotechnology , amorphous silica , amorphous silicon , amorphous solid , chemical engineering , optoelectronics , crystalline silicon , crystallography , organic chemistry , chemistry , engineering
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field‐driven local reordering of a random oxide network.

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