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Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides
Author(s) -
Cai Hui,
Soignard Emmanuel,
Ataca Can,
Chen Bin,
Ko Changhyun,
Aoki Toshihiro,
Pant Anupum,
Meng Xiuqing,
Yang Shengxue,
Grossman Jeffrey,
Ogletree Frank D.,
Tongay Sefaattin
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601184
Subject(s) - epitaxy , materials science , van der waals force , substrate (aquarium) , gallium , dislocation , nanotechnology , band gap , optoelectronics , layer (electronics) , physics , composite material , oceanography , quantum mechanics , molecule , geology , metallurgy
Atomically thin quasi‐2D GaSe flakes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface. The bandgap is continuously tuned from its commonly accepted value at 620 down to the 700 nm range, only attained previously by alloying Te into GaSe (GaSe x Te 1− x ). This is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet ween screw‐dislocation‐driven and layer‐bylayer growth, and the design of different morphologies with different material–substrate interaction (strain) energies.