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Electron Mobility Exceeding 10 cm 2 V −1 s −1 and Band‐Like Charge Transport in Solution‐Processed n‐Channel Organic Thin‐Film Transistors
Author(s) -
Xu Xiaomin,
Yao Yifan,
Shan Bowen,
Gu Xiao,
Liu Danqing,
Liu Jinyu,
Xu Jianbin,
Zhao Ni,
Hu Wenping,
Miao Qian
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601171
Subject(s) - thin film transistor , materials science , electron mobility , organic semiconductor , transistor , optoelectronics , electron , analytical chemistry (journal) , charge (physics) , thin film , semiconductor , field effect transistor , grain boundary , nanotechnology , layer (electronics) , electrical engineering , organic chemistry , chemistry , physics , microstructure , quantum mechanics , voltage , metallurgy , engineering
Solution‐processed n‐channel organic thin‐film transistors (OTFTs) that exhibit a field‐effect mobility as high as 11 cm 2 V −1 s −1 at room temperature and a band‐like temperature dependence of electron mobility are reported. By comparison of solution‐processed OTFTs with vacuum‐deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band‐like charge transport.