Electron Mobility Exceeding 10 cm 2  V −1  s −1  and Band‐Like Charge Transport in Solution‐Processed n‐Channel Organic Thin‐Film Transistors | Zendy

Xu Xiaomin | Zendy; Yao Yifan | Zendy; Shan Bowen | Zendy; Gu Xiao | Zendy; Liu Danqing | Zendy; Liu Jinyu | Zendy; Xu Jianbin | Zendy; Zhao Ni | Zendy; Hu Wenping | Zendy; Miao Qian | Zendy

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Electron Mobility Exceeding 10 cm 2 V −1 s −1 and Band‐Like Charge Transport in Solution‐Processed n‐Channel Organic Thin‐Film Transistors

Author(s) -

Xu Xiaomin,

Yao Yifan,

Shan Bowen,

Gu Xiao,

Liu Danqing,

Liu Jinyu,

Xu Jianbin,

Zhao Ni,

Hu Wenping,

Miao Qian

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201601171

Subject(s) - thin film transistor , materials science , electron mobility , organic semiconductor , transistor , optoelectronics , electron , analytical chemistry (journal) , charge (physics) , thin film , semiconductor , field effect transistor , grain boundary , nanotechnology , layer (electronics) , electrical engineering , organic chemistry , chemistry , physics , microstructure , quantum mechanics , voltage , metallurgy , engineering

Solution‐processed n‐channel organic thin‐film transistors (OTFTs) that exhibit a field‐effect mobility as high as 11 cm 2 V −1 s −1 at room temperature and a band‐like temperature dependence of electron mobility are reported. By comparison of solution‐processed OTFTs with vacuum‐deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band‐like charge transport.

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