Premium
Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air
Author(s) -
Fonseca Jose J.,
Tongay Sefaattin,
Topsakal Mehmet,
Chew Annabel R.,
Lin Alan J.,
Ko Changhyun,
Luce Alexander V.,
Salleo Alberto,
Wu Junqiao,
Dubon Oscar D.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601151
Subject(s) - materials science , band gap , semiconductor , optoelectronics , annealing (glass) , telluride , wide bandgap semiconductor , gallium , nanotechnology , composite material , metallurgy
A giant bandgap reduction in layered GaTe is demonstrated . Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.