Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm 2  V −1  s −1 | Zendy

Paterson Alexandra F. | Zendy; Treat Neil D. | Zendy; Zhang Weimin | Zendy; Fei Zhuping | Zendy; WyattMoon Gwenhivir | Zendy; Faber Hendrik | Zendy; Vourlias George | Zendy; Patsalas Panos A. | Zendy; Solomeshch Olga | Zendy; Tessler Nir | Zendy; Heeney Martin | Zendy; Anthopoulos Thomas D. | Zendy

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Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm 2 V −1 s −1

Author(s) -

Paterson Alexandra F.,

Treat Neil D.,

Zhang Weimin,

Fei Zhuping,

WyattMoon Gwenhivir,

Faber Hendrik,

Vourlias George,

Patsalas Panos A.,

Solomeshch Olga,

Tessler Nir,

Heeney Martin,

Anthopoulos Thomas D.

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201601075

Subject(s) - dopant , materials science , transistor , ternary operation , electron mobility , polymer , conjugated system , small molecule , molecule , thin film transistor , phase (matter) , doping , nanotechnology , optoelectronics , organic chemistry , computer science , physics , chemistry , composite material , biochemistry , quantum mechanics , voltage , layer (electronics) , programming language

A ternary organic semiconducting blend composed of a small‐molecule, a conjugated polymer, and a molecular p‐dopant is developed and used in solution‐processed organic transistors with hole mobility exceeding 13 cm 2 V −1 s −1 (see the Figure). It is shown that key to this development is the incorporation of the p‐dopant and the formation of a vertically phase‐separated film microstructure.

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