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Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm 2 V −1 s −1
Author(s) -
Paterson Alexandra F.,
Treat Neil D.,
Zhang Weimin,
Fei Zhuping,
WyattMoon Gwenhivir,
Faber Hendrik,
Vourlias George,
Patsalas Panos A.,
Solomeshch Olga,
Tessler Nir,
Heeney Martin,
Anthopoulos Thomas D.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601075
Subject(s) - dopant , materials science , transistor , ternary operation , electron mobility , polymer , conjugated system , small molecule , molecule , thin film transistor , phase (matter) , doping , nanotechnology , optoelectronics , organic chemistry , computer science , physics , chemistry , composite material , biochemistry , quantum mechanics , voltage , layer (electronics) , programming language
A ternary organic semiconducting blend composed of a small‐molecule, a conjugated polymer, and a molecular p‐dopant is developed and used in solution‐processed organic transistors with hole mobility exceeding 13 cm 2 V −1 s −1 (see the Figure). It is shown that key to this development is the incorporation of the p‐dopant and the formation of a vertically phase‐separated film microstructure.