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Efficient Low‐Temperature Solution‐Processed Lead‐Free Perovskite Infrared Light‐Emitting Diodes
Author(s) -
Hong WeiLi,
Huang YuChi,
Chang CheYu,
Zhang ZhiChao,
Tsai HuaiRen,
Chang NingYi,
Chao YuChiang
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601024
Subject(s) - perovskite (structure) , materials science , optoelectronics , diode , infrared , light emitting diode , radiance , grain boundary , halide , oled , engineering physics , optics , layer (electronics) , nanotechnology , crystallography , physics , composite material , inorganic chemistry , chemistry , microstructure
Lead‐free perovskite infrared light‐emitting diodes are achieved by using a halide perovskite CsSnI 3 as an emissive layer. The film shows compact micrometer‐sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr −1 m −2 at a current density of 364.3 mA cm −2 and maximum external quantum efficiency of 3.8% at 4.5 V.