Efficient Low‐Temperature Solution‐Processed Lead‐Free Perovskite Infrared Light‐Emitting Diodes | Zendy

Hong WeiLi | Zendy; Huang YuChi | Zendy; Chang CheYu | Zendy; Zhang ZhiChao | Zendy; Tsai HuaiRen | Zendy; Chang NingYi | Zendy; Chao YuChiang | Zendy

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Efficient Low‐Temperature Solution‐Processed Lead‐Free Perovskite Infrared Light‐Emitting Diodes

Author(s) -

Hong WeiLi,

Huang YuChi,

Chang CheYu,

Zhang ZhiChao,

Tsai HuaiRen,

Chang NingYi,

Chao YuChiang

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201601024

Subject(s) - perovskite (structure) , materials science , optoelectronics , diode , infrared , light emitting diode , radiance , grain boundary , halide , oled , engineering physics , optics , layer (electronics) , nanotechnology , crystallography , physics , composite material , inorganic chemistry , chemistry , microstructure

Lead‐free perovskite infrared light‐emitting diodes are achieved by using a halide perovskite CsSnI 3 as an emissive layer. The film shows compact micrometer‐sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr −1 m −2 at a current density of 364.3 mA cm −2 and maximum external quantum efficiency of 3.8% at 4.5 V.

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