Premium
High‐Performance 2D Rhenium Disulfide (ReS 2 ) Transistors and Photodetectors by Oxygen Plasma Treatment
Author(s) -
Shim Jaewoo,
Oh Aely,
Kang DongHo,
Oh Seyong,
Jang Sung Kyu,
Jeon Jaeho,
Jeon Min Hwan,
Kim Minwoo,
Choi Changhwan,
Lee Jaehyeong,
Lee Sungjoo,
Yeom Geun Young,
Song Young Jae,
Park JinHong
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201601002
Subject(s) - photodetector , materials science , rhenium , transistor , optoelectronics , thin film transistor , plasma , disulfide bond , oxygen , analytical chemistry (journal) , nanotechnology , metallurgy , electrical engineering , chromatography , layer (electronics) , biochemistry , chemistry , physics , organic chemistry , quantum mechanics , voltage , engineering
A high‐performance ReS 2 ‐based thin‐film transistor and photodetector with high on/off‐current ratio (10 4 ), high mobility (7.6 cm 2 V −1 s −1 ), high photoresponsivity (2.5 × 10 7 A W −1 ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O 2 plasma treatment is reported.