Premium
High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure
Author(s) -
Rong Xin,
Wang Xinqiang,
Ivanov Sergey V.,
Jiang Xinhe,
Chen Guang,
Wang Ping,
Wang Weiying,
He Chenguang,
Wang Tao,
Schulz Tobias,
Albrecht Martin,
Jmerik Valentin N.,
Toropov Alexey A.,
Ratnikov Viacheslav V.,
Kozlovsky Vladimir I.,
Martovitsky Victor P.,
Jin Peng,
Xu Fujun,
Yang Xuelin,
Qin Zhixin,
Ge Weikun,
Shi Junjie,
Shen Bo
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201600990
Subject(s) - materials science , optoelectronics , molecular beam epitaxy , ultraviolet , light source , cathode ray , excitation , power (physics) , optics , epitaxy , electron , nanotechnology , electrical engineering , physics , layer (electronics) , quantum mechanics , engineering
Quasi‐2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high‐output‐power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron‐beam excitation. This device is promising and competitive in non‐line‐of‐sight communications or the sterilization field.