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A Route to Permanent Valley Polarization in Monolayer MoS 2
Author(s) -
Singh Nirpendra,
Schwingenschlögl Udo
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201600970
Subject(s) - valleytronics , monolayer , materials science , polarization (electrochemistry) , doping , realization (probability) , optoelectronics , condensed matter physics , nanotechnology , ferromagnetism , physics , chemistry , spintronics , statistics , mathematics
Realization of permanent valley polarization in Cr‐doped monolayer MoS 2 is found to be unfeasible because of extended moment formation. Introduction of an additional hole is suggested as a viable solution. V‐doped monolayer MoS 2 is demonstrated to sustain permanent valley polarization and therefore can serve as a prototype material for valleytronics.