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Near Room‐Temperature Memory Devices Based on Hybrid Spin‐Crossover@SiO 2 Nanoparticles Coupled to Single‐Layer Graphene Nanoelectrodes
Author(s) -
Holovchenko Anastasia,
Dugay Julien,
GiménezMarqués Mónica,
TorresCavanillas Ramón,
Coronado Eugenio,
van der Zant Herre S. J.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201600890
Subject(s) - materials science , graphene , bistability , nanoparticle , spin crossover , nanotechnology , hysteresis , electrode , layer (electronics) , conductance , graphene nanoribbons , optoelectronics , condensed matter physics , physics , chemistry
The charge transport properties of SCO [Fe(Htrz) 2 (trz)](BF 4 ) NPs covered with a silica shell placed in between single‐layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room‐temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.