Near Room‐Temperature Memory Devices Based on Hybrid Spin‐Crossover@SiO 2  Nanoparticles Coupled to Single‐Layer Graphene Nanoelectrodes | Zendy

Holovchenko Anastasia | Zendy; Dugay Julien | Zendy; GiménezMarqués Mónica | Zendy; TorresCavanillas Ramón | Zendy; Coronado Eugenio | Zendy; van der Zant Herre S. J. | Zendy

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Near Room‐Temperature Memory Devices Based on Hybrid Spin‐Crossover@SiO 2 Nanoparticles Coupled to Single‐Layer Graphene Nanoelectrodes

Author(s) -

Holovchenko Anastasia,

Dugay Julien,

GiménezMarqués Mónica,

TorresCavanillas Ramón,

Coronado Eugenio,

van der Zant Herre S. J.

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201600890

Subject(s) - materials science , graphene , bistability , nanoparticle , spin crossover , nanotechnology , hysteresis , electrode , layer (electronics) , conductance , graphene nanoribbons , optoelectronics , condensed matter physics , physics , chemistry

The charge transport properties of SCO [Fe(Htrz) 2 (trz)](BF 4 ) NPs covered with a silica shell placed in between single‐layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room‐temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.

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