Ultrafast Response p‐Si/n‐ZnO Heterojunction Ultraviolet Detector Based on Pyro‐Phototronic Effect | Zendy

Wang Zhaona | Zendy; Yu Ruomeng | Zendy; Wang Xingfu | Zendy; Wu Wenzhuo | Zendy; Wang Zhong Lin | Zendy

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Ultrafast Response p‐Si/n‐ZnO Heterojunction Ultraviolet Detector Based on Pyro‐Phototronic Effect

Author(s) -

Wang Zhaona,

Yu Ruomeng,

Wang Xingfu,

Wu Wenzhuo,

Wang Zhong Lin

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201600884

Subject(s) - materials science , ultraviolet , ultrashort pulse , optoelectronics , heterojunction , wurtzite crystal structure , response time , detector , zinc , nanowire , nanotechnology , optics , laser , physics , computer graphics (images) , computer science , metallurgy

A light‐self‐induced pyro‐phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p‐Si/n‐ZnO heterostructures. The relatively long response/recovery time of zinc‐oxide‐based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro‐phototronic effect.

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