Premium
Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching
Author(s) -
Choi Jaeho,
Park Sunghak,
Lee Joohee,
Hong Kootak,
Kim DoHong,
Moon Cheon Woo,
Park Gyeong Do,
Suh Junmin,
Hwang Jinyeon,
Kim Soo Young,
Jung Hyun Suk,
Park NamGyu,
Han Seungwu,
Nam Ki Tae,
Jang Ho Won
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201600859
Subject(s) - halide , resistive touchscreen , materials science , optoelectronics , electroforming , voltage , non blocking i/o , field (mathematics) , service (business) , nanotechnology , engineering physics , electrical engineering , inorganic chemistry , chemistry , engineering , layer (electronics) , biochemistry , mathematics , economy , pure mathematics , economics , catalysis
Organolead halide perovskites are used for low‐operating‐voltage multilevel resistive switching. Ag/CH 3 NH 3 PbI 3 /Pt cells exhibit electroforming‐free resistive switching at an electric field of 3.25 × 10 3 V cm –1 for four distinguishable ON‐state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low‐electric‐field resistive switching via filament formation and annihilation.