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Nanoscale Positioning of Single‐Photon Emitters in Atomically Thin WSe 2
Author(s) -
Kern Johannes,
Niehues Iris,
Tonndorf Philipp,
Schmidt Robert,
Wigger Daniel,
Schneider Robert,
Stiehm Torsten,
Michaelis de Vasconcellos Steffen,
Reiter Doris E.,
Kuhn Tilmann,
Bratschitsch Rudolf
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201600560
Subject(s) - materials science , nanorod , nanoscopic scale , monolayer , nanostructure , nanotechnology , semiconductor , photon , optoelectronics , position (finance) , optics , physics , finance , economics
Single‐photon emitters in monolayer WSe 2 are created at the nanoscale gap between two single‐crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single‐photon emitters are localized there with a precision better than 140 nm.