Premium
Layer Engineering of 2D Semiconductor Junctions
Author(s) -
He Yongmin,
Sobhani Ali,
Lei Sidong,
Zhang Zhuhua,
Gong Yongji,
Jin Zehua,
Zhou Wu,
Yang Yingchao,
Zhang Yuan,
Wang Xifan,
Yakobson Boris,
Vajtai Robert,
Halas Naomi J.,
Li Bo,
Xie Erqing,
Ajayan Pulickel
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201600278
Subject(s) - rectification , materials science , homogeneous , semiconductor , fabrication , layer (electronics) , p–n junction , nanotechnology , service (business) , optoelectronics , physics , electrical engineering , engineering , statistical physics , medicine , alternative medicine , pathology , voltage , economy , economics
A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super‐thin‐layered 2D materials, and exhibits similar characteristics as p–n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe 2 junctions between domains of different thicknesses.