Layer Engineering of 2D Semiconductor Junctions | Zendy

He Yongmin | Zendy; Sobhani Ali | Zendy; Lei Sidong | Zendy; Zhang Zhuhua | Zendy; Gong Yongji | Zendy; Jin Zehua | Zendy; Zhou Wu | Zendy; Yang Yingchao | Zendy; Zhang Yuan | Zendy; Wang Xifan | Zendy; Yakobson Boris | Zendy; Vajtai Robert | Zendy; Halas Naomi J. | Zendy; Li Bo | Zendy; Xie Erqing | Zendy; Ajayan Pulickel | Zendy

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Layer Engineering of 2D Semiconductor Junctions

Author(s) -

He Yongmin,

Sobhani Ali,

Lei Sidong,

Zhang Zhuhua,

Gong Yongji,

Jin Zehua,

Zhou Wu,

Yang Yingchao,

Zhang Yuan,

Wang Xifan,

Yakobson Boris,

Vajtai Robert,

Halas Naomi J.,

Li Bo,

Xie Erqing,

Ajayan Pulickel

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201600278

Subject(s) - materials science , rectification , homogeneous , semiconductor , fabrication , layer (electronics) , p–n junction , optoelectronics , photovoltaic system , nanotechnology , electrical engineering , medicine , physics , alternative medicine , pathology , voltage , thermodynamics , engineering

A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super‐thin‐layered 2D materials, and exhibits similar characteristics as p–n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe 2 junctions between domains of different thicknesses.

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