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Real‐Space Visualization of Energy Loss and Carrier Diffusion in a Semiconductor Nanowire Array Using 4D Electron Microscopy
Author(s) -
Bose Riya,
Sun Jingya,
Khan Jafar I.,
Shaheen Basamat S.,
Adhikari Aniruddha,
Ng Tien Khee,
Burlakov Victor M.,
Parida Manas R.,
Priante Davide,
Goriely Alain,
Ooi Boon S.,
Bakr Osman M.,
Mohammed Omar F.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201600202
Subject(s) - materials science , nanowire , semiconductor , electron microscope , diffusion , nanotechnology , low energy electron microscopy , visualization , space (punctuation) , optoelectronics , optics , physics , computer science , thermodynamics , linguistics , philosophy , artificial intelligence
A breakthrough in the development of 4D scanning ultrafast electron microscopy is described for real‐time and space imaging of secondary electron energy loss and carrier diffusion on the surface of an array of nanowires as a model system, providing access to a territory that is beyond the reach of either static electron imaging or any time‐resolved laser spectroscopy.