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Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls
Author(s) -
Li Linze,
Britson Jason,
Jokisaari Jacob R.,
Zhang Yi,
Adamo Carolina,
Melville Alexander,
Schlom Darrell G.,
Chen LongQing,
Pan Xiaoqing
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201600160
Subject(s) - materials science , ferroelectricity , nanoscopic scale , transmission electron microscopy , resistive touchscreen , thin film , optoelectronics , electrical resistivity and conductivity , domain wall (magnetism) , nanotechnology , electrical engineering , dielectric , engineering , physics , magnetization , quantum mechanics , magnetic field
Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and erasing stable, nanoscale, strongly charged domain walls using an in situ transmission electron microscopy technique. The resistance can be read nondestructively and presents the largest off/on ratio (≈10 5 ) ever reported in room‐temperature ferroelectric devices, opening new avenues for engineering ferroelectric thin‐film devices.