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Dielectrics: Cellulose‐Derivative‐Based Gate Dielectric for High‐Performance Organic Complementary Inverters (Adv. Mater. 46/2015)
Author(s) -
Petritz Andreas,
Wolfberger Archim,
Fian Alexander,
Griesser Thomas,
IrimiaVladu Mihai,
Stadlober Barbara
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570313
Subject(s) - materials science , noise margin , cellulose , dielectric , inverter , optoelectronics , transistor , noise (video) , gate dielectric , electrical engineering , voltage , chemical engineering , computer science , image (mathematics) , engineering , artificial intelligence
On page 7645, A. Petritz, B. Stadlober, and co‐workers demonstrate that the cellulose derivative, trimethylsilyl cellulose, is an excellent choice for the gate dielectric layer of organic field‐effect transistors and inverter circuits. The fabricated inverters display extraordinary performance in terms of DC gain, low operational voltage and large noise margin corroborated by excellent immunity against operational instabilities. Image design by Georg Wieser, WIEsuell‐3D Animation & Multimedia, Austria.