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Memory Devices: Resistive Switching Behavior in Organic–Inorganic Hybrid CH 3 NH 3 PbI 3 −x Cl x Perovskite for Resistive Random Access Memory Devices (Adv. Mater. 40/2015)
Author(s) -
Yoo Eun Ji,
Lyu Miaoqiang,
Yun JungHo,
Kang Chi Jung,
Choi Young Jin,
Wang Lianzhou
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570272
Subject(s) - perovskite (structure) , materials science , resistive random access memory , resistive touchscreen , reproducibility , non volatile memory , optoelectronics , electrical conductor , nanotechnology , voltage , chemical engineering , electrical engineering , composite material , chemistry , chromatography , engineering
Y. J. Choi, L. Wang, and co‐workers report on page 6170 a new application of an organic–inorganic hybrid perovskite (CH 3 NH 3 PbI 3− x Cl x ) in a resistive random‐access‐memory device. The memory device has a very simple structure consisting of Au/CH 3 NH 3 PbI 3− x Cl x on conductive substrates, which exhibits a typical resistive‐switching behavior and non‐volatile properties with a low operating voltage, as well as good stability and reproducibility. This finding adds another important potential application of hybrid perovskites to their functionality library.