Field‐Effect Transistors: High Performance Polymer Nanowire Field‐Effect Transistors with Distinct Molecular Orientations (Adv. Mater. 34/2015) | Zendy

Xiao Chengyi | Zendy; Zhao Guangyao | Zendy; Zhang Andong | Zendy; Jiang Wei | Zendy; Janssen René A. J. | Zendy; Li Weiwei | Zendy; Hu Wenping | Zendy; Wang Zhaohui | Zendy

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Field‐Effect Transistors: High Performance Polymer Nanowire Field‐Effect Transistors with Distinct Molecular Orientations (Adv. Mater. 34/2015)

Author(s) -

Xiao Chengyi,

Zhao Guangyao,

Zhang Andong,

Jiang Wei,

Janssen René A. J.,

Li Weiwei,

Hu Wenping,

Wang Zhaohui

Publication year - 2015

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201570225

Subject(s) - materials science , nanowire , transistor , field effect transistor , enhanced data rates for gsm evolution , conjugated system , polymer , optoelectronics , nanotechnology , field (mathematics) , composite material , electrical engineering , voltage , engineering , mathematics , pure mathematics , telecommunications , computer science

Polymer nanowires based on two diketopyrrolopyrrole conjugated polymers with similar chemical structures display distinct “edge‐on” and “face‐on” configurations and high well‐balanced hole and electron mobilities of 5.47 cm 2 V −1 s −1 and 5.33 cm 2 V −1 s −1 in field‐effect transistors. Such transistors are demonstrated by W. Li, W. Hu, Z. Wang, and co‐workers on page 4963.

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