Premium
Field‐Effect Transistors: High Performance Polymer Nanowire Field‐Effect Transistors with Distinct Molecular Orientations (Adv. Mater. 34/2015)
Author(s) -
Xiao Chengyi,
Zhao Guangyao,
Zhang Andong,
Jiang Wei,
Janssen René A. J.,
Li Weiwei,
Hu Wenping,
Wang Zhaohui
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570225
Subject(s) - materials science , nanowire , transistor , field effect transistor , enhanced data rates for gsm evolution , conjugated system , polymer , optoelectronics , nanotechnology , field (mathematics) , composite material , electrical engineering , voltage , engineering , mathematics , pure mathematics , telecommunications , computer science
Polymer nanowires based on two diketopyrrolopyrrole conjugated polymers with similar chemical structures display distinct “edge‐on” and “face‐on” configurations and high well‐balanced hole and electron mobilities of 5.47 cm 2 V −1 s −1 and 5.33 cm 2 V −1 s −1 in field‐effect transistors. Such transistors are demonstrated by W. Li, W. Hu, Z. Wang, and co‐workers on page 4963.