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Flexible Transistors: Drying‐Mediated Self‐Assembled Growth of Transition Metal Dichalcogenide Wires and their Heterostructures (Adv. Mater. 28/2015)
Author(s) -
Lee SeoungKi,
Lee JaeBok,
Singh Jyoti,
Rana Kuldeep,
Ahn JongHyun
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570190
Subject(s) - materials science , heterojunction , graphene , transistor , transition metal , nanotechnology , optoelectronics , electrode , self assembly , voltage , catalysis , electrical engineering , chemistry , organic chemistry , engineering
Well‐aligned transition metal dichalcogenide (TMD) wires and their heterostructures are fabricated by J.‐H. Ahn and co‐workers, using a solution‐based, self‐assembly growth method, as described on page 4142. The structures, thicknesses, and the repetition period of the self‐assembled wires are controlled by regulating the internal flow of the precursor solution. As a practical application, WS 2 /MoS 2 heterojunctions with clean and well‐aligned interfaces and a MoS 2 ‐wire‐based hybrid transistor with a graphene electrode are built on various substrates.