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Photodetectors: Low‐Dimensional Structure Vacuum‐Ultraviolet‐Sensitive ( λ < 200 nm) Photodetector with Fast‐Response Speed Based on High‐Quality AlN Micro/Nanowire (Adv. Mater. 26/2015)
Author(s) -
Zheng Wei,
Huang Feng,
Zheng Ruisheng,
Wu Honglei
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570176
Subject(s) - photodetector , materials science , optoelectronics , ultraviolet , nanowire , nitride , response time , vacuum ultraviolet , optics , nanotechnology , computer graphics (images) , physics , layer (electronics) , computer science
A vacuum‐ultraviolet (VUV) (10–200 nm) low‐dimensional photodetector is fabricated by F. Huang and co‐workers, as described on page 3921. A two‐step physical vapor‐transport method is designed to grow high‐quality single‐crystal aluminum nitride micro‐/nanowires, and realize a relatively fast response speed for VUV detection. This work may open a way for developing diminutive, power‐saving, and low‐cost VUV materials and sensors integrated on satellites and aerospace‐planes.