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2D Materials: Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls (Adv. Mater. 25/2015)
Author(s) -
Heo Hoseok,
Sung Ji Ho,
Jin Gangtae,
Ahn JiHoon,
Kim Kyungwook,
Lee MyoungJae,
Cha Soonyoung,
Choi Hyunyong,
Jo MoonHo
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570169
Subject(s) - materials science , stacking , nucleation , monolayer , image stitching , transition metal , kinetics , hexagonal crystal system , crystallography , nanotechnology , optics , thermodynamics , nuclear magnetic resonance , biochemistry , chemistry , physics , quantum mechanics , catalysis
On page 3803, M.‐H. Jo and co‐workers demonstrate heteroepitaxial growth of MoS 2 and WS 2 monolayer (ML) semiconductors. Two different growth modes, i.e., vertical stacking and lateral stitching, can be controlled by the nucleation kinetics during sequential monolayer growth. These enable large‐area ML heterostructures to be fabricated without interlayer rotation misfits; thereby, this method can offer possibilities for the realization of controlled 2D semiconductor superstructures on large scales.