Oxide Semiconductors: Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors (Adv. Mater. 16/2015) | Zendy

Ou Gang | Zendy; Li Dongke | Zendy; Pan Wei | Zendy; Zhang Qinghua | Zendy; Xu Ben | Zendy; Gu Lin | Zendy; Nan Cewen | Zendy; Wu Hui | Zendy

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Oxide Semiconductors: Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors (Adv. Mater. 16/2015)

Author(s) -

Ou Gang,

Li Dongke,

Pan Wei,

Zhang Qinghua,

Xu Ben,

Gu Lin,

Nan Cewen,

Wu Hui

Publication year - 2015

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201570110

Subject(s) - materials science , band gap , semiconductor , arc melting , oxide , optoelectronics , absorption (acoustics) , wide bandgap semiconductor , metallurgy , composite material , alloy

W. Pan, H. Wu, and co‐workers highlight engineering the bandgap of oxides through rapid arc‐melting on page 2589. Rich defects are implanted by a fast melting and cooling process, resulting in narrowed bandgap and enhanced optical absorption in a series of oxides including ZnO, Y 2 O 3 , ZrO 2 , Nb 2 O 5 , In 2 O 3 , SnO 2 , CeO 2 , Cu 2 O, and WO 3 .

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