Premium
Oxide Semiconductors: Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors (Adv. Mater. 16/2015)
Author(s) -
Ou Gang,
Li Dongke,
Pan Wei,
Zhang Qinghua,
Xu Ben,
Gu Lin,
Nan Cewen,
Wu Hui
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570110
Subject(s) - materials science , band gap , semiconductor , arc melting , oxide , optoelectronics , absorption (acoustics) , wide bandgap semiconductor , metallurgy , composite material , alloy
W. Pan, H. Wu, and co‐workers highlight engineering the bandgap of oxides through rapid arc‐melting on page 2589. Rich defects are implanted by a fast melting and cooling process, resulting in narrowed bandgap and enhanced optical absorption in a series of oxides including ZnO, Y 2 O 3 , ZrO 2 , Nb 2 O 5 , In 2 O 3 , SnO 2 , CeO 2 , Cu 2 O, and WO 3 .