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Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth (Adv. Mater. 13/2015)
Author(s) -
Loitsch Bernhard,
Rudolph Daniel,
Morkötter Stefanie,
Döblinger Markus,
Grimaldi Gianluca,
Hanschke Lukas,
Matich Sonja,
Parzinger Eric,
Wurstbauer Ursula,
Abstreiter Gerhard,
Finley Jonathan J.,
Koblmüller Gregor
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570086
Subject(s) - nanowire , materials science , semiconductor , photoluminescence , quantum dot , optoelectronics , epitaxy , nanotechnology , layer (electronics)
On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound agreement with theoretical calculations of radial quantum confinement. Cover by Christoph Hohmann, Nanosystems Initiative Munich (NIM).