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Organic Thin‐Film Transistors: Flexible Low‐Voltage Organic Complementary Circuits: Finding the Optimum Combination of Semiconductors and Monolayer Gate Dielectrics (Adv. Mater. 2/2015)
Author(s) -
Kraft Ulrike,
Sejfić Mirsada,
Kang Myeong Jin,
Takimiya Kazuo,
Zaki Tarek,
Letzkus Florian,
Burghartz Joachim N.,
Weber Edwin,
Klauk Hagen
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201570013
Subject(s) - monolayer , materials science , transistor , organic semiconductor , electronic circuit , semiconductor , optoelectronics , thin film transistor , contact resistance , channel (broadcasting) , dielectric , alkyl , nanotechnology , voltage , electrical engineering , layer (electronics) , organic chemistry , chemistry , engineering
The observation that n‐channel organic semiconductors perform better when deposited onto fluoroalkyl self–assembled monolayers (SAMs) while p‐channel semiconductors perform better on alkyl SAMs raises the question as to which SAM to employ in complementary circuits. As U. Kraft and co‐workers describe on page 207, the answer depends on the transistor's contact resistance and hence the channel length. Here, a signal delay of 3.1 μs is measured in ‐circuits based on transistors with a channel length of 1 μm.