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Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects
Author(s) -
Pham Viet Phuong,
Yeom Geun Young
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201506402
Subject(s) - molybdenum disulfide , materials science , doping , nanotechnology , molybdenum , engineering physics , optoelectronics , composite material , metallurgy , engineering
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS 2 ) have recently attracted much attention due to their nonzero‐gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS 2 ‐based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS 2 thin layers, and the progress made so far for their doping‐based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped‐MoS 2 in industry, as a guide for 2D material community, are also provided.