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Origin and Tunability of Unusually Large Surface Capacitance in Doped Cerium Oxide Studied by Ambient‐Pressure X‐Ray Photoelectron Spectroscopy
Author(s) -
Gopal Chirranjeevi Balaji,
Gabaly Farid El,
McDaniel Anthony H.,
Chueh William C.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201506333
Subject(s) - x ray photoelectron spectroscopy , cerium oxide , materials science , capacitance , cerium , oxide , doping , nanotechnology , analytical chemistry (journal) , chemical engineering , optoelectronics , environmental chemistry , chemistry , metallurgy , electrode , engineering
The volumetric redox (chemical) capacitance of the surface of CeO 2−δ films is quantified in situ to be 100‐fold larger than the bulk values under catalytically relevant conditions. Sm addition slightly lowers the surface oxygen nonstoichiometry, but effects a 10‐fold enhancement in surface chemical capacitance by mitigating defect interactions, highlighting the importance of differential nonstoichiometry for catalysis.

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