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Double‐Sided Junctions Enable High‐Performance Colloidal‐Quantum‐Dot Photovoltaics
Author(s) -
Liu Mengxia,
de Arquer F. Pelayo García,
Li Yiying,
Lan Xinzheng,
Kim GiHwan,
Voznyy Oleksandr,
Jagadamma Lethy Krishnan,
Abbas Abdullah Saud,
Hoogland Sjoerd,
Lu Zhenghong,
Kim Jin Young,
Amassian Aram,
Sargent Edward H.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201506213
Subject(s) - materials science , quantum dot , nanotechnology , photovoltaics , point (geometry) , computer science , optoelectronics , electrical engineering , photovoltaic system , engineering , geometry , mathematics
The latest advances in colloidal‐quantum‐dot material processing are combined with a double‐sided junction architecture, which is done by efficiently incorporating indium ions in the ZnO eletrode. This platform allows the collection of all photogenerated carriers even at the maximum power point. The increased depletion width in the device facilitates full carrier collection, leading to a record 10.8% power conversion efficiency.