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Graphene Coupled with Silicon Quantum Dots for High‐Performance Bulk‐Silicon‐Based Schottky‐Junction Photodetectors
Author(s) -
Yu Ting,
Wang Feng,
Xu Yang,
Ma Lingling,
Pi Xiaodong,
Yang Deren
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201506140
Subject(s) - photodetector , graphene , materials science , quantum dot , optoelectronics , silicon , schottky barrier , schottky diode , reflection (computer programming) , nanotechnology , computer science , diode , programming language
Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built‐in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.