Graphene Coupled with Silicon Quantum Dots for High‐Performance Bulk‐Silicon‐Based Schottky‐Junction Photodetectors | Zendy

Yu Ting | Zendy; Wang Feng | Zendy; Xu Yang | Zendy; Ma Lingling | Zendy; Pi Xiaodong | Zendy; Yang Deren | Zendy

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Graphene Coupled with Silicon Quantum Dots for High‐Performance Bulk‐Silicon‐Based Schottky‐Junction Photodetectors

Author(s) -

Yu Ting,

Wang Feng,

Xu Yang,

Ma Lingling,

Pi Xiaodong,

Yang Deren

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201506140

Subject(s) - photodetector , graphene , materials science , quantum dot , optoelectronics , silicon , schottky barrier , schottky diode , reflection (computer programming) , nanotechnology , computer science , diode , programming language

Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built‐in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.

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