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From 1D to 3D: Tunable Sub‐10 nm Gaps in Large Area Devices
Author(s) -
Zhou Ziwei,
Zhao Zhiyuan,
Yu Ye,
Ai Bin,
Möhwald Helmuth,
Chiechi Ryan C.,
Yang Joel K. W.,
Zhang Gang
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201505929
Subject(s) - materials science , stacking , electric field , optoelectronics , field (mathematics) , nanotechnology , mathematics , pure mathematics , physics , nuclear magnetic resonance , quantum mechanics
Tunable sub‐10 nm 1D nanogaps are fabricated based on nanoskiving . The electric field in different sized nanogaps is investigated theoretically and experimentally, yielding nonmonotonic dependence and an optimized gap‐width (5 nm). 2D nanogap arrays are fabricated to pack denser gaps combining surface patterning techniques. Innovatively, 3D multistory nanogaps are built via a stacking procedure, processing higher integration, and much improved electric field.