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Facet‐Independent Electric‐Field‐Induced Volume Metallization of Tungsten Trioxide Films
Author(s) -
Altendorf Simone G.,
Jeong Jaewoo,
Passarello Donata,
Aetukuri Nagaphani B.,
Samant Mahesh G.,
Parkin Stuart S. P.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201505631
Subject(s) - materials science , facet (psychology) , volume (thermodynamics) , monoclinic crystal system , tungsten trioxide , ionic conductivity , semiconductor , nanotechnology , engineering physics , tungsten , optoelectronics , crystallography , chemistry , thermodynamics , crystal structure , psychology , social psychology , physics , personality , electrode , metallurgy , electrolyte , engineering , big five personality traits
Reversible metallization of band and Mott insulators by ionic‐liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO 3 with an associated monoclinic‐to‐cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.