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An Organic Vertical Field‐Effect Transistor with Underside‐Doped Graphene Electrodes
Author(s) -
Kim Jong Su,
Kim Beom Joon,
Choi Young Jin,
Lee Moo Hyung,
Kang Moon Sung,
Cho Jeong Ho
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201505378
Subject(s) - graphene , materials science , doping , electrode , transistor , field effect transistor , nanotechnology , field (mathematics) , optoelectronics , electrical engineering , physics , voltage , engineering , pure mathematics , mathematics , quantum mechanics
High‐performance vertical field‐effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.