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Engineering Bandgaps of Monolayer MoS 2 and WS 2 on Fluoropolymer Substrates by Electrostatically Tuned Many‐Body Effects
Author(s) -
Liu Bo,
Zhao Weijie,
Ding Zijing,
Verzhbitskiy Ivan,
Li Linjun,
Lu Junpeng,
Chen Jianyi,
Eda Goki,
Loh Kian Ping
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504876
Subject(s) - monolayer , fluoropolymer , materials science , doping , molybdenum disulfide , dielectric , nanotechnology , ambipolar diffusion , band gap , optoelectronics , physics , plasma , quantum mechanics , metallurgy , composite material , polymer
Intrinsic electrical and excitonic properties of monolayer transition‐metal dichalcogenides can be revealed on CYTOP fluoropolymer substrates with greatly suppressed unintentional doping and dielectric screening. Ambipolar transport behavior is observed in monolayer WS 2 by applying solid‐state back gates. The excitonic properties of monolayer MoS 2 and WS 2 are determined by intricate interplays between the bandgap renormalization, Pauli blocking, and carrier screening against carrier doping.