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High‐Mobility Transistors Based on Large‐Area and Highly Crystalline CVD‐Grown MoSe 2 Films on Insulating Substrates
Author(s) -
Rhyee JongSoo,
Kwon Junyeon,
Dak Piyush,
Kim Jin Hee,
Kim Seung Min,
Park Jozeph,
Hong Young Ki,
Song Won Geun,
Omkaram Inturu,
Alam Muhammad A.,
Kim Sunkook
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504789
Subject(s) - materials science , transistor , electron mobility , nanotechnology , thin film transistor , electronics , high resolution , phase (matter) , optoelectronics , engineering physics , electrical engineering , voltage , physics , remote sensing , layer (electronics) , quantum mechanics , geology , engineering
Large‐area and highly crystalline CVD‐grown multilayer MoSe 2 films exhibit a well‐defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe 2 transistors exhibit high mobility up to 121 cm 2 V −1 s −1 and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high‐resolution displays and human‐centric soft electronics.