Premium
Ferroelectrically Gated Atomically Thin Transition‐Metal Dichalcogenides as Nonvolatile Memory
Author(s) -
Ko Changhyun,
Lee Yeonbae,
Chen Yabin,
Suh Joonki,
Fu Deyi,
Suslu Aslihan,
Lee Sangwook,
Clarkson James David,
Choe Hwan Sung,
Tongay Sefaatin,
Ramesh Ramamoorthy,
Wu Junqiao
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504779
Subject(s) - valleytronics , materials science , ferroelectricity , optoelectronics , non volatile memory , interfacing , thin film , photoluminescence , semiconductor , nanotechnology , transistor , formamidinium , field effect transistor , transition metal , perovskite (structure) , voltage , electrical engineering , computer science , chemical engineering , biochemistry , chemistry , engineering , dielectric , computer hardware , catalysis
Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin‐film ferroelectric field‐effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.