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Tunable Graphene–GaSe Dual Heterojunction Device
Author(s) -
Kim Wonjae,
Li Changfeng,
Chaves Ferney A.,
Jiménez David,
Rodriguez Raul D.,
Susoma Jannatul,
Fenner Matthias A.,
Lipsanen Harri,
Riikonen Juha
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504514
Subject(s) - rectification , graphene , materials science , schottky diode , optoelectronics , heterojunction , dual (grammatical number) , diode , monolayer , field (mathematics) , channel (broadcasting) , nanotechnology , voltage , computer science , electrical engineering , telecommunications , art , literature , engineering , mathematics , pure mathematics
A field‐effect device based on dual graphene–GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.