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Doping‐Induced Carrier Density Modulation in Polymer Field‐Effect Transistors
Author(s) -
Lee Byoung Hoon,
Bazan Guillermo C.,
Heeger Alan J.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504307
Subject(s) - doping , materials science , field effect transistor , transistor , optoelectronics , polymer , nanotechnology , electron mobility , electrode , field (mathematics) , electrical engineering , voltage , chemistry , composite material , mathematics , pure mathematics , engineering
Controlled device parameters of high‐mobility polymer field‐effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4‐(4,4‐dihexadecyl‐4H‐cyclopenta[1,2‐b:5,4‐b′]dithiophen‐2‐yl)‐alt‐[1,2,5]thiadiazolo‐[3,4‐c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.