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A Single‐Material Logical Junction Based on 2D Crystal PdS 2
Author(s) -
GhorbaniAsl Mahdi,
Kuc Agnieszka,
Miró Pere,
Heine Thomas
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201504274
Subject(s) - materials science , monolayer , bilayer , channel (broadcasting) , transistor , dissipation , optoelectronics , nanotechnology , contact resistance , engineering physics , computer science , physics , membrane , telecommunications , quantum mechanics , layer (electronics) , genetics , voltage , biology
A single‐material logical junction with negligible contact resistance is designed by exploiting quantum‐confinement effects in 1T PdS 2 . The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor.